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rev.5.1 _00 external transistor type cmos voltage regulator S-816 series seiko instruments inc. 1 the S-816 series consists of external transistor type positive voltage regulators, which have been developed using the cmos process. these voltage regulator s incorporate an overcurrent protection, and shutdown function. a low drop-out type regulator with an output current ranging from several hundreds of ma to 1 a can be configured with the pnp transistor driven by this ic. despite the features of the S-816, which is low current consumption, the improvement in its transient response characteristics of the ic with a newly deviced phase compensation circuit made it possible to employ the products of the S-816 series even in applications where heavy input variation or load variation is experienced. the S-816 series regulators serve as ideal power supply units for portable devices when coupled with the sot-23-5 minipackage, providing numerous outstanding features, including low current consumption. since this series can accommodate an input voltage of up to 16 v, it is also suitable when operating via an ac adapter. ? features (1) low current consumption ? operation mode: 30 a typ., 40 a max. ? shutdown mode: 1 a max. (2) input voltage range: 16 v max. (3) output voltage accuracy: 2.0% (4) output voltage range: selectable betw een 2.5 v and 6.0 v in steps of 0.1 v. (5) with shutdown function. (6) a built-in current source (10 a) eliminates the need of a base-emitter resistance. (7) with overcurrent (base current) protection function. (8) lead-free products ? applications ? power supplies for on-board such as battery devices for portable telephones, electronic notebooks, pdas. ? constant voltage power supplies for cameras, video equipment and portable communications equipment. ? power supplies for cpus. ? post-regulators for switching regulators. ? main regulators in multiple-power supply systems. ? package drawing code package name package tape reel sot-23-5 mp005-a mp005-a mp005-a www.datasheet.net/ datasheet pdf - http://www..co.kr/
external transistor type cmos voltage regulator S-816 series rev.5.1 _00 2 seiko instruments inc. ? block diagram + ? ext vout vss off on/ vin v ref current source overcurrent protection circuit pull-up error a mplifie r sink drive r + ? + ? remark 1. to ensure you power cutoff of the external tr ansistor when the device is powered down, the ext output is pulled up to v in by a pull-up resistance (approx. 0.5 m ? ) inside the ic. 2. the diode inside the ic is a parasitic diode. figure 1 www.datasheet.net/ datasheet pdf - http://www..co.kr/
external transistor type cmos voltage regulator rev.5.1 _00 S-816 series seiko instruments inc. 3 ? product code structure 1. product name S-816a xx a mc - xxx t2 g ic direction in tape specifications product name (abbreviation) package name (abbreviation) mc: sot-23-5 output voltage 10 25 to 60 (2.5 v to 6.0 v) 2. product name list table 1 output voltage (v) product name output voltage (v) product name 2.5 v 2.0% S-816a25amc-baat2g 4.3 v 2.0% S-816a43amc-bast2g 2.6 v 2.0% S-816a26amc-babt2g 4.4 v 2.0% S-816a44amc-batt2g 2.7 v 2.0% S-816a27amc-bact2g 4.5 v 2.0% S-816a45amc-baut2g 2.8 v 2.0% S-816a28amc-badt2g 4.6 v 2.0% S-816a46amc-bavt2g 2.9 v 2.0% S-816a29amc-baet2g 4.7 v 2.0% S-816a47amc-bawt2g 3.0 v 2.0% S-816a30amc-baft2g 4.8 v 2.0% S-816a48amc-baxt2g 3.1 v 2.0% S-816a31amc-bagt2g 4.9 v 2.0% S-816a49amc-bayt2g 3.2 v 2.0% S-816a32amc-baht2g 5.0 v 2.0% S-816a50amc-bazt2g 3.3 v 2.0% S-816a33amc-bait2g 5.1 v 2.0% S-816a51amc-bbat2g 3.4 v 2.0% S-816a34amc-bajt2g 5.2 v 2.0% S-816a52amc-bbbt2g 3.5 v 2.0% S-816a35amc-bakt2g 5.3 v 2.0% S-816a53amc-bbct2g 3.6 v 2.0% S-816a36amc-balt2g 5.4 v 2.0% S-816a54amc-bbdt2g 3.7 v 2.0% S-816a37amc-bamt2g 5.5 v 2.0% S-816a55amc-bbet2g 3.8 v 2.0% S-816a38amc-bant2g 5.6 v 2.0% S-816a56amc-bbft2g 3.9 v 2.0% S-816a39amc-baot2g 5.7 v 2.0% S-816a57amc-bbgt2g 4.0 v 2.0% S-816a40amc-bapt2g 5.8 v 2.0% S-816a58amc-bbht2g 4.1 v 2.0% S-816a41amc-baqt2g 5.9 v 2.0% S-816a59amc-bbit2g 4.2 v 2.0% S-816a42amc-bart2g 6.0 v 2.0% S-816a60amc-bbjt2g www.datasheet.net/ datasheet pdf - http://www..co.kr/
external transistor type cmos voltage regulator S-816 series rev.5.1 _00 4 seiko instruments inc. ? pin configuration table 2 pin no. symbol description 1 ext output pin for base-current control 2 vss gnd pin 3 off on/ shutdown pin ("h" active) 4 vin ic power supply pin 5 vout output voltage monitoring pin sot-23-5 top view 1 2 3 5 4 figure 2 www.datasheet.net/ datasheet pdf - http://www..co.kr/
external transistor type cmos voltage regulator rev.5.1 _00 S-816 series seiko instruments inc. 5 ? absolute maximum ratings table 3 (ta = 25 c unless otherwise specified) item symbol absolute maximum ratings unit vin pin voltage v in v ss ? 0.3 to v ss + 18 v vout pin voltage v out v ss ? 0.3 to v ss + 18 v off on/ pin voltage v on/off v ss ? 0.3 to v ss + 18 v ext pin voltage v ext v ss ? 0.3 to v in + 0.3 v ext pin current i ext 50 ma 250 (when not mounted on board) mw power dissipation p d 600 *1 mw operating ambient temperature t opr ? 40 to + 85 c storage temperature t stg ? 40 to + 125 c *1. when mounted on board [mounted on board] (1) board size : 114.3 mm 76.2 mm t1.6 mm (2) board name : jedec standard51-7 caution the absolute maximum ratings are rated values exceeding which the product could suffer physical damage. these values must therefore not be exceeded under any conditions. (1) when mounted on board (2) when not mounted on board 0 50 100 150 600 400 0 power dissi p ation ( p d ) [ mw ] ambient tem p erature ( ta ) [ c ] 200 100 300 500 700 0 50 100 150 300 200 0 power dissi p ation ( p d ) [ mw ] ambient temperature (ta) [ c] 100 250 150 50 figure 3 power dissipation of package www.datasheet.net/ datasheet pdf - http://www..co.kr/
external transistor type cmos voltage regulator S-816 series rev.5.1 _00 6 seiko instruments inc. ? electrical characteristics table 4 (ta = 25 c unless otherwise specified) item symbol conditions min. typ. max. unit test circuit input voltage v in ? ? ? 16 v 1 output voltage v out v in = v out + 1 v, i out = 50 ma, v on/off = "h" v out 0.98 v out v out 1.02 v 1 maximum output current (pnp output) *1 ? ? ? 1 ? a 1 drop-out voltage *1 ? v drop i out = 100 ma ? 100 ? mv 1 load regulation (pnp output) *1 ? v out v in = v out + 1 v, 1 ma < i out < 1 a ? ? 60 mv 1 line regulation (pnp output) *1 in out out v v v ? ? ? i out = 50 ma, v out + 1 v < v in < 16 v ? 0.15 0.01 0.15 %/v 1 output voltage temperature coefficient ta v out ? ? v in = v out + 1 v, i out = 50 ma, v on/off = "h", ta =? 40 to 85 c ? 0.15 ? mv/ c 1 current consumption during operation i ss v in = v out + 1 v, v on/off = "h" ? 30 40 a 1 current consumption during shutdown i stb v in = 16 v, v on/off = "l" ? ? 1 a 1 ext output source constant current i src v in = v out + 1 v, v on/off = "h", v ext = v out , v out = v out 0.95 ? ? 10 ? a 2 ext output pull-up resistance r up v in = 16 v, v on/off = "l" 0.25 0.50 1.00 m ? 2 ext output sink current i sink v in = v out + 1 v, v on/off = "h", v out = v out 0.95 ? 10 ? ma 2 leakage current during ext output off i off v in = v ext = v out + 1 v, v out = 0 v, v on/off = "l" ? ? 0.1 a 2 ext output sink overcurrent set value i max v in = v ext = 7 v, v on/off = "h", v out = v out 0.95 12 16 20 ma 2 shutdown pin input voltage v sh v in = v out + 1 v, v out = 0 v, check v ext = "l" 2.4 ? ? v 3 v sl v in = v out + 1 v, v out = 0 v, check v ext = "h" ? ? 0.3 shutdown pin input current i sh v on/off = v out + 1 v ? ? 0.1 a 2 i sl v on/off = 0 v ? ? ? 0.1 *1. the characteristics vary with the associated external components. the characteristics given above are those obtained when t he ic is combined with a toshiba corporation 2sa1213-y for the pnp transistor and a 10 f tantalum capacitor fo r the output capacitor (c l ). www.datasheet.net/ datasheet pdf - http://www..co.kr/
external transistor type cmos voltage regulator rev.5.1 _00 S-816 series seiko instruments inc. 7 ? test circuits 1. 2. vin ext vout vss off on/ a a v + ? + ? vin ext vout vss off on/ a a a a figure 4 figure 5 3. vin ext vout vss off on/ a a v a figure 6 www.datasheet.net/ datasheet pdf - http://www..co.kr/
external transistor type cmos voltage regulator S-816 series rev.5.1 _00 8 seiko instruments inc. ? operation 1. basic operation figure 7 shows a block diagram of the S-816 series. the device compares the voltage which is obtained from dividing output voltage v out by feedback resistances r a and r b with reference voltage v ref through the error amplifier, output of which controls the sink driver. by regulating the base current of the external pnp transistor, the ic maintains a constant output voltage that is not susceptible to an input voltage variation or temperature variation. out in c l ext vout vss off on/ vin v ref current source overcurrent protection circuit r b r a r c error amplifier sink drive r + ? + ? figure 7 2. internal circuits 2.1. shutdown pin ( off on/ pin) this pin activates and deactiv ates the regulating operation. when the shutdown pin is set to "l", the v in voltage appears through the ext pin, prodding the external pnp transistor to off. all the inte rnal circuits stop working, and subst antial savings in cu rrent consumption are achieved accordingly. in this condition, the ext pin is pulled up to v in by a pull-up resistance (approx. 0.5 m ? ) inside the ic in order to ensure you power cut off of the external pnp transistor. the shutdown pin is configured as shown in figure 8 . since neither pull-up or pull-down is performed internally, please avoid using the pin in a floating stat e. also, be sure to refrain from applying a voltage of 0.3 v to 2.4 v to this pin lest the current consumpt ion increase. when this shutdown pin is not used, leave it coupled to the vin pin. table 5 shutdown pin internal circuit ext pin voltage vout pin voltage "h" activated v in ? v be set value "l" deactivated v in hi-z vin vss off on/ figure 8 www.datasheet.net/ datasheet pdf - http://www..co.kr/
external transistor type cmos voltage regulator rev.5.1 _00 S-816 series seiko instruments inc. 9 2.2. overcurrent protection circuit the overcurrent protection function of the S-816 series monitors the ext pin sink current (base current of the external pnp transistor) with an overcurrent pr otection circuit incorporated in the ic, and limits that current (ext pin sink current). as the load current increases, the ext pin sink curren t (base current of the external pnp transistor) also grows larger to maintain the output voltage. the ov ercurrent protection circuit clamps and limits the ext pin sink current to the ext output sink overcurrent set value (i max ) in order to prevent it from increasing beyond that value. the load current at which the over current protection function works is represented by the following equation: i out_max = i max h fe in this case, h fe is the dc amplification factor of the external pnp transistor. i out_max represents the maximum output current of this regula tor. if it is attempted to obtain a higher load current, the output voltage will fall. note that within the overcurrent protection function of this ic, the external pnp transistor may not be able to be protected from collector overcurrents pr oduced by an ext-gnd short-circuiting or other phenomenon occurring outside the ic. to protect t he external pnp transistor from such collector overcurrents, it will be necessary to choose a tr ansistor with a larger power dissipation than i out_max v in , or to add an external overcurrent protection circuit. with regard to this external overcurrent protection circuit, refer to " overcurrent protection circuit " in " ? application circuits ". 2.3. phase compensation circuit the S-816 series performs phase compensation with a phase compensation circuit, incorporated in the ic, and the esr (equivalent series resistance) of an output capacitor, to secure stable operation even in the presence of output load variation. a uniquel y devised phase compensation circuit has resulted in improved transient response characteristics of the ic, while preserving the same feature of low current consumption. this feature allows the ic to be us ed in applications where the input variation or load variation is heavy. because the S-816 series is designed to perform th e phase compensation, utiliz ing the esr of an output capacitor, such output capacitor (c l ) should always be placed between vout and vss. since each capacitor to be employed has an optimum range of their own characteristics, be sure to choose components for the ic with your all attention. for details, refer to " ? selection of associated external components ". www.datasheet.net/ datasheet pdf - http://www..co.kr/
external transistor type cmos voltage regulator S-816 series rev.5.1 _00 10 seiko instruments inc. ? selection of associated external components 1. external pnp transistor select an external transistor according to the co nditions of input voltage, output voltage, and output current. a low-saturation voltage pnp transistor with "h fe " ranging from 100 to 300 will be suitable for this ic. the parameters for selection of the external pnp transistor include the maximum collector-base voltage, the maximum collector-emitter voltage, the dc amplification factor (h fe ), the maximum collector current and the collector dissipation. the maximum collector-base voltage and the maximu m collector-emitter voltage are determined by the input voltage range in each specific application to be employed. you may select a transistor with an input voltage at least several volts higher than the expected maximum input voltage. the dc amplification factor (h fe ) affects the maximum output current that can be supplied to the load. with an internal overcurrent protection circuit of th is ic, the base current is clamped, and will not exceed the overcurrent set value (i max ). select a transistor which is capable of delivering the required maximum output current to the intended application, with hf e and maximum collector current. (refer to " ? overcurrent protection circuit ") likewise, select a transistor, based on the maximum output current and the difference between the input and output voltages, with due attention to the collector dissipation. 2. output capacitor (c l ) the S-816 series performs phase compensation by an internal phase compensation circuit of ic, and the esr (equivalent series resistance) of an output capa citor for to secure stable operation even in the presence of output load variation. t herefore, always place a capacitor (c l ) of 4.7 f or more between vout and vss. for stable operation of the S-816 series, it is e ssential to employ a capacitor with an esr having optimum range. whether an esr is larger or smaller than that optimum range (approximately 0.1 ? to 5 ? ), this could produce an unstable output, and cause a possibility of oscillations. for this reason, a tantalum electrolytic capacitor is recommended. when a ceramic capacitor or an os capacitor having a low esr is se lected, it will be necessary to connect an additional resistance that serves for the esr in series with the output capacitor, as illustrated in figure 9 . the resistance value that needs to be added will be from 0.1 ? to 5 ? , but this value may vary depends on the service conditions, and should be defined through careful evaluation in advance. in general, our recommendation is 0.3 ? or so. an aluminum electrolytic capacitor tends to pr oduce oscillations as its esr increases at a low temperature. beware of this case. when this type of capacitor is employed, make thorough evaluation of it, including its temperature characteristics. out in r ? 0.3 ? c l S-816 series ext vout vss off on/ vin figure 9 caution the above connection diagram and constant will not guarantee successful operation. perform through evaluation using the actual application to set the constant. www.datasheet.net/ datasheet pdf - http://www..co.kr/
external transistor type cmos voltage regulator rev.5.1 _00 S-816 series seiko instruments inc. 11 ? standard circuit + ? ext vout vss off on/ vin v ref current source overcurrent protection circuit pull-up error a mplifier sink driver + ? + ? figure 10 caution the above connection diagram does not guarantee correct operation. perform sufficient evaluation using the actual application to set the constant. www.datasheet.net/ datasheet pdf - http://www..co.kr/
external transistor type cmos voltage regulator S-816 series rev.5.1 _00 12 seiko instruments inc. ? precautions ? the overcurrent protection function of this ic detects and limits the sink current at the ext pin inside the ic. therefore, it does not work on collector ov ercurrents which are caused by an ext-gnd short- circuiting or other phenomenon outside the ic. to prot ect the external pnp transistor from collector overcurrents perfectly, it is neces sary to provide another external overcurrent protection circuit. ? this ic performs phase compensation by using an in ternal phase compensator circuit and the esr of an output capacitor. therefore, al ways place a capacitor of 4.7 f or more between vout and vss. a tantalum type capacitor is recommended for this pur pose. moreover, to secure stable operation of the S-816 series, it will be necessary to employ a capaci tor having an esr (equivalent series resistance) covered in a certain optimum range (0.1 ? to 5 ? ). whether an esr is larger or smaller than that optimum range, this could result in an unstable out put, and cause a possibility of oscillations. select a capacitor through careful evaluation made acco rding to the actual service conditions. ? do not apply an electrostatic discharge to this ic that exceeds the performance ratings of the built-in electrostatic protection circuit. ? make sure that the power dissipation inside the ic d ue to the ext output sink current (especially at a high temperature) will not su rpass the power dissi pation of the package. ? sii claims no responsibility for any disputes arisin g out of or in connection with any infringement by products including this ic of patents owned by a third party. www.datasheet.net/ datasheet pdf - http://www..co.kr/
external transistor type cmos voltage regulator rev.5.1 _00 S-816 series seiko instruments inc. 13 ? application circuits 1. overcurrent protection circuit figure 11 shows a sample of overcurrent protection impl emented with an external circuit connected. the internal overcurrent protection function of the S-816 series is designed to detect the sink current (base current of the pnp transistor) at the ext pin, therefore it may not be able to protect the external pnp transistor from collector overcurrents caused by an ext-gnd short-circuiting or other phenomenon occurring outside the ic. this sample circuit activates the regulator inte rmittently against collector overcurrents, thereby suppressing the heat generation of the external pnp transistor. the duty of the on-time and off-time of the interm ittent operation can be regulated through an external component. v in c in 10 f + ? r 2 2 k ? r 1 100 k ? r s 0.5 ? r 4 2 k ? tr1 r 3 2 k ? c 2 0.22 f tr2 c 1 0.22 f c l 10 f + ? vin ext vout S-816 series vss out off on/ 2sa1213 y figure 11 caution the above connection diagram and constant will not guarantee successful operation. perform through evaluation using the actual application to set the constant. S-816a30amc (v in = 4 v) 1 a load current (0.5 a/div) 0 a 2 v v on/off (1 v/div) 0 v t (2 ms/div) S-816a30amc (v in = 4 v) 1 a load current (0.5 a/div) 0 a 2 v v on/off (1 v/div) 0 v t (100 s/div) figure 12 output current waveforms during intermittent operation prompted by load short-circuiting www.datasheet.net/ datasheet pdf - http://www..co.kr/
external transistor type cmos voltage regulator S-816 series rev.5.1 _00 14 seiko instruments inc. the detection of the overcurrent is done by the sense resistance (r s ) and the pnp transistor (tr1). when tr1 comes on, triggered by a voltage drop of r s , the npn transistor (tr2) also comes on, according to the time constants of the capacitor (c 2 ) and resistance (r 2 ). this causes the shutdown pin to turn to the "l" level, and the regulating operation to st op, and interrupting the current to the load. when the load current is cut off, the voltage drop of r s stops. this makes tr1 off again, and also makes the npn transistor (tr2) off. in this condition, the shutdown pin returns to the "h" level, according to the time constants of the capacitor (c 1 ) and resistance (r 1 ). this delay time in which shutdown pin returns to the "h" level from the "l" level is the time in which the load current remains cut off. if an overcurrent flows again after the shutdown pin has assumed the "h" level following the delay time and the regulating operation has been restarted, the circuit will again suspend the regulating operation and resume the intermittent operation. this intermi ttent operation will be contin ued till the overcurrentt is eliminated, and once theovercurrent dis appears, the normal operation will be restored. the overcurrent detection value (i out_max ) is represented by the following equation: i out_max = |v be1 | / r s in this case, r s denotes the resistance value of the sense resistance, and v be1 denotes the base-emitter saturation voltage of tr1. for the pnp transistor (tr1) and the npn transistor (tr2), try to select those of small-signal type that offer a sufficient withstand voltage against the input voltage (v in ). the on-time (t on ) and the off-time (t off ) of the intermittent operation are broadly expressed by the following equations: t on = ? 1 c 2 r 2 l n ( 1 ? ( v be2 ( 1 + r 2 / r 3 ) ) / ( v in ? v be1 ) ) t off = ? 1 c 1 r 1 l n ( 1 ? v sh / v in ) in this case, v be2 denotes the base-emitter saturation voltage of tr2, v in denotes the input voltage, and v sh denotes the inversion voltage ("l" "h") of the shutdown pin. set the on-time value that does not cause the overcurre nt protection to be activated by a rush current to the load capacitor. then, compute the ratio betwe en the on-time and the off-time from the maximum input voltage of the appropriate application and the power dissipation of the external pnp transistor, and decide the off-time with reference to the on-time established earlier. take the equation above as a rough guide, because the actual on-time (t on ) and off-time (t off ) should be defined and checked using the utilizing components. 2. external adjustment of output voltage the S-816 series allows you to adjust the output volt age or to set its value over the output voltage range (6 v) of the products of this se ries, when external resistances r a , r b and capacitor c c are added, as illustrated in figure 13 . moreover, a temperature gradient can be obtained by inserting a thermistor or other element in series with external resistances r a and r b . v in c in + ? c l off on/ vin ext + ? vout vss out + ? c c r a r b r 1 r 2 error amplifier v ref figure 13 www.datasheet.net/ datasheet pdf - http://www..co.kr/
external transistor type cmos voltage regulator rev.5.1 _00 S-816 series seiko instruments inc. 15 the S-816 series has an internal impedance resulting from r 1 and r 2 between the vout and the vss pin, as shown in figure 13 . therefore, the influence of the internal resistances (r 1 , r 2 ) of the ic has to be taken into consideration in defining the output voltage (out). the output voltage (out) is expres sed by the following equation: out = v out + v out r a ( r b // *1 r i ) *1. "//" denotes a combined resistance in parallel. in this case, v out is the output voltage value of the S-816 series, r a and r b is the resistance values of the external resistances, and r i is the resistance value (r 1 + r 2 ) of the internal resistances in the ic. the accuracy of the output voltage (o ut) is determined by the absolute accuracy of external connecting resistances r a and r b , the output voltage accuracy (v out 2.0%) of the S-816 series, and deviations in the absolute value of the internal resistance (r i ) in the ic. the maximum value (outmax) and the minimum value (outmin) of the output voltage (out), including deviations, are expressed by the following equations: outmax = v out 1.02 + v out 1.02 r amax ( r bmin // r imin ) outmin = v out 0.98 + v out 0.98 r amin ( r bmax // r imax ) where r amax , r amin , r bmax and r bmin denote the maximum and minimum of the absolute accuracy of external resistances r a and r b , and r imax and r imin denote the maximum and minimum deviations of the absolute value of the internal resistance (r i ) in the ic, respectively. the deviations in the absolute value of internal resistance (r i ) in the ic vary with the output voltage set value of the S-816 series, and are broadly classified as follows: ? output voltage (v out ) 2.5 v to 2.7 v ? 3.29 m ? to 21.78 m ? ? output voltage (v out ) 2.8 v to 3.1 v ? 3.29 m ? to 20.06 m ? ? output voltage (v out ) 3.2 v to 3.7 v ? 2.23 m ? to 18.33 m ? ? output voltage (v out ) 3.8 v to 5.1 v ? 2.23 m ? to 16.61 m ? ? output voltage (v out ) 5.2 v to 6.0 v ? 2.25 m ? to 14.18 m ? if a value of r i given by the equation shown below is taken in calculating the output voltage (out), a median voltage deviation of the out put voltage (out) will be obtained. r i = 2 ( 1 (maximum value of internal resistance of ic) + 1 (minimum value of internal resistance of ic) ) the closer the output voltage (out) and the output voltage set value (v out ) of the ic are brought to each other, the more the accuracy of the output voltage (out) remains immune to deviations in the absolute accuracy of external resistances (r a , r b ) and the absolute value of the internal resistance (r i ) of the ic. in particular, to suppress the influence of deviations in the internal resistance (r i ), the resistance values of external resistances (r a , r b ) need to be limited to a much smaller value than that of the internal resistance (r i ). however, since reactive current flows through the external resistances (r a , r b ), there is a tradeoff between the accuracy of the output voltage (out ) and the reactive current. this should be taken into consideration, according to the re quirements of the intended application. note that when larger value (more than 1 m ? ) is taken for the external resistances (r a , r b ), ic is vulnerable to external noise. check the influence of this value well with the actual application. furthermore, add a capacitor c c in parallel to the external resistance r a in order to avoid output oscillations and other types of instability. (refer to figure 13 ) make sure that the capacitance value of c c is larger than the value given by the following equation: c c [f] 1 ( 2 r a [ ? ] 6000 ) caution the above connection diagram and constant will not guarantee successful operation. perform through evaluation using the actual application to set the constant. www.datasheet.net/ datasheet pdf - http://www..co.kr/
external transistor type cmos voltage regulator S-816 series rev.5.1 _00 16 seiko instruments inc. ? typical characteristics 1. input voltage (v in ) - output voltage (v out ) characteristics v in -v out S-816a30amc (i out = 50 ma) v in -v out S-816a50amc (i out = 50 ma) ta =? 40 c ta = 85 c ta = 25 c 3.10 3.08 3.06 3.04 3.02 3.00 2.98 2.96 2.94 2.92 2.90 2 4 6 8 10 12 14 16 v in (v) v out (v) ta = 85 c ta =? 40 c ta = 25 c 5.10 5.08 5.06 5.04 5.02 5.00 4.98 4.96 4.94 4.92 4.90 2 4 6 8 10 12 14 16 v in (v) v out (v) v in -v out S-816a30amc (ta = 25 c) v in -v out S-816a50amc (ta = 25 c) i out = 1 ma i out = 100 ma i out = 500 ma i out = 1 a 3.10 3.05 3.00 2.95 2.90 2.85 2.80 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 v in (v) v out (v) i out = 1a i out = 1 ma i out = 100 ma i out = 500 ma 5.10 5.05 5.00 4.95 4.90 4.85 4.80 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 v in (v) v out (v) 2. output current (i out ) - output voltage (v out ) characteristics i out -v out S-816a30amc (v in = 4 v) i out -v out S-816a50amc (v in = 6 v) ta = 85 c ta = 25 c ta =? 40 c 3.10 3.08 3.06 3.04 3.02 3.00 2.98 2.96 2.94 2.92 2.90 1 10 100 1000 i out (ma) v out (v) ta = 25 c ta = 85 c ta =? 40 c 5.10 5.08 5.06 5.04 5.02 5.00 4.98 4.96 4.94 4.92 4.90 1 10 100 1000 i out (ma) v out (v) www.datasheet.net/ datasheet pdf - http://www..co.kr/
external transistor type cmos voltage regulator rev.5.1 _00 S-816 series seiko instruments inc. 17 3. temperature (ta) - output voltage (v out ) characteristics ta-v out S-816a30amc (v in = 4 v, i out = 50 ma) ta-v out S-816a50amc (v in = 6 v, i out = 50 ma) 3.10 3.08 3.06 3.04 3.02 3.00 2.98 2.96 2.94 2.92 2.90 ? 50 ? 25 0 25 50 75 100 ta ( c) v out (v) 5.10 5.08 5.06 5.04 5.02 5.00 4.98 4.96 4.94 4.92 4.90 ? 50 ? 25 0 25 50 75 100 ta ( c) v out (v) 4. input voltage (v in ) - consumption current (i ss ) characteristics v in -i ss S-816a30amc (v on/off = "h") ta =? 40 c ta = 85 c ta = 25 c 50 45 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 v in (v) i ss ( a) 5. input voltage (v in ) - ext output sink overcurrent set value (i max ) characteristics v in -i max S-816a30amc ta =? 40 c ta = 85 c ta = 25 c 22 20 18 16 14 12 10 4 6 8 10 12 14 16 v in (v) i max (ma) www.datasheet.net/ datasheet pdf - http://www..co.kr/
external transistor type cmos voltage regulator S-816 series rev.5.1 _00 18 seiko instruments inc. 6. input voltage (v in ) - shutdown pin input voltage (v sh , v sl ) characteristics v in -v sh S-816a30amc v in -v sl S-816a30amc ta =? 40 c ta = 85 c ta = 25 c 2.5 2.0 1.5 1.0 0.5 0.0 4 6 8 10 12 14 16 v in (v) v sh (v) ta =? 40 c ta = 85 c ta = 25 c 2.5 2.0 1.5 1.0 0.5 0.0 4 6 8 10 12 14 16 v in (v) v sl (v) www.datasheet.net/ datasheet pdf - http://www..co.kr/
external transistor type cmos voltage regulator rev.5.1 _00 S-816 series seiko instruments inc. 19 ? transient response characteristics (typical data) 1. input transient response characteristics (power-on v in = 0 v v out + 1 v, i out = 0 a, c l = 10 f) S-816a30amc (v in = 0 v 4 v) 4 v v in (2 v/div) 0 v v out (2 v/div) 0 v t (100 s/div) S-816a50amc (v in = 0 v 6 v) 6 v v in (2 v/div) 0 v v out (2 v/div) 0 v t (100 s/div) 2. input transient response characteristics (supply voltage variation v in = v out + 1 v ? v out + 2 v, c l = 10 f) S-816a30amc (i out = 10 ma) 5 v v in (0.5 v/div) 4 v v out (20 mv/div) 3 v t (100 s/div) S-816a30amc (i out = 300 ma) 5 v v in (0.5 v/div) 4 v v out (20 mv/div) 3 v t (100 s/div) S-816a50amc (i out = 10 ma) 7 v v in (0.5 v/div) 6 v v out (20 mv/div) 5 v t (100 s/div) S-816a50amc (i out = 300 ma) 7 v v in (0.5 v/div) 6 v v out (20 mv/div) 5 v t (100 s/div) www.datasheet.net/ datasheet pdf - http://www..co.kr/
external transistor type cmos voltage regulator S-816 series rev.5.1 _00 20 seiko instruments inc. 3. load transient response characteristics (power-on i out = 1 ma ? 100 ma, c l = 10 f) S-816a30amc (v in = 4 v) 100 ma i out (50 ma/div) 1 ma v out (20 mv/div) 3 v t (50 s/div) S-816a30amc (v in = 4 v) 100 ma i out (50 ma/div) 1 ma v out (20 mv/div) 3 v t (50 s/div) S-816a50amc (v in = 6 v) 100 ma i out (50 ma/div) 1 ma v out (20 mv/div) 5 v t (50 s/div) S-816a50amc (v in = 6 v) 100 ma i out (50 ma/div) 1 ma v out (20 mv/div) 5 v t (50 s/div) 4. shutdown pin transient response characteristics (v on/off = 0 v v in , i out = 0 a, c l = 10 f) S-816a30amc (v in = 4 v) 4 v v on/off (2 v/div) 0 v v out (2 v/div) 0 v t (100 s/div) S-816a50amc (v in = 6v) 6 v v on/off (2 v/div) 0 v v out (2 v/div) 0 v t (100 s/div) www.datasheet.net/ datasheet pdf - http://www..co.kr/

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the information described herein is subject to change without notice. seiko instruments inc. is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. the application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design. when the products described herein are regulated products subject to the wassenaar arrangement or other agreements, they may not be exported without authorization from the appropriate governmental authority. use of the information described herein for other purposes and/or reproduction or copying without the express permission of seiko instruments inc. is strictly prohibited. the products described herein cannot be used as part of any device or equipment affecting the human body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus installed in airplanes and other vehicles, without prior written permission of seiko instruments inc. although seiko instruments inc. exerts the greatest possible effort to ensure high quality and reliability, the failure or malfunction of semiconductor products may occur. the user of these products should therefore give thorough consideration to safety design, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue. www.datasheet.net/ datasheet pdf - http://www..co.kr/

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